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Tunnel Effect

Analytical Model and Current Gain Enhancement of Polysilicon-Emitter Contact Bipolar Transistors

Doping / Current Density / Grain Boundary / Single Crystal / Theoretical Framework / Analytical Model / Bipolar transistors / Experimental Data / Electrical And Electronic Engineering / Tunnel Effect / Polycrystal / Bipolar Transistor / Analytical Model / Bipolar transistors / Experimental Data / Electrical And Electronic Engineering / Tunnel Effect / Polycrystal / Bipolar Transistor
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Design metrics for gate oxide leakage characterisation in nano-CMOS transistors

Nanoelectronics / Monte Carlo Simulation / Electronics / Modeling / Monte Carlo Simulations / Numerical Simulation / Leakage Current / Steady state / Capacitance / Electrical And Electronic Engineering / Tunnel Effect / Monte Carlo Method / Numerical Simulation / Leakage Current / Steady state / Capacitance / Electrical And Electronic Engineering / Tunnel Effect / Monte Carlo Method
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Design metrics for gate oxide leakage characterisation in nano-CMOS transistors

Nanoelectronics / Monte Carlo Simulation / Electronics / Modeling / Monte Carlo Simulations / Numerical Simulation / Leakage Current / Steady state / Capacitance / Electrical And Electronic Engineering / Tunnel Effect / Monte Carlo Method / Numerical Simulation / Leakage Current / Steady state / Capacitance / Electrical And Electronic Engineering / Tunnel Effect / Monte Carlo Method
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